PD57070-E datasheet(4/22 Pages) STMICROELECTRONICS

Part #	PD57070-E

Description	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PDF	22 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 22 page

Electrical characteristics

PD57070-E, PD57070S-E

4/22

Electrical characteristics

TCASE = +25

2.1

Static

2.2

Dynamic

Table 3.

Static

Symbol

Test conditions

Min

Typ

Max

Unit

VDSS(BR)

VGS = 0 V

IDS = 1 mA

IDSS

VGS = 0 V

VDS = 28 V

µA

IGSS

VGS = 20 V

VDS = 0 V

µA

VGS(Q)

VDS = 28 V

ID = 100 mA

2.0

5.0

VDS(ON)

VGS = 10 V

ID = 3 A

0.8

0.95

GFS

VDS = 10 V

ID = 3 A

2.5

mho

CISS

VGS = 0 V

VDS = 28 V

f = 1 MHz

COSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

3.8

Table 4.

Dynamic

Symbol

Test conditions

Min

Typ

Max

Unit

Pout

VDD = 28 V IDQ = 250 mA

f = 945 MHz

VDD = 28 V IDQ = 250 mA POUT = 70 W f = 945 MHz

14.7

VDD = 28 V IDQ = 250 mA POUT = 70 W f = 945 MHz

Load

mismatch

VDD = 28 V IDQ = 250 mA POUT = 70 W f = 945 MHz

All phase angles

5:1

VSWR

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