TPS62350 datasheet(3/45 Pages) TI

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RECOMMENDED OPERATING CONDITIONS

DISSIPATION RATINGS

(1)

ELECTRICAL CHARACTERISTICS

TPS62350, TPS62351

TPS62352, TPS62353

TPS62354, TPS62355, TPS62356

SLVS540D – MAY 2006 – REVISED OCTOBER 2007

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Input voltage range

2.7

5.5

Operating temperature range(1)

-40

°C

Operating virtual junction temperature range

-40

125

°C

(1)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the

maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package

in the application (

JA), as given by the following equation: TA(max)= TJ(max)–(θJA X PD(max)).

POWER RATING

DERATING FACTOR

PACKAGE

RθJA

(2)

FOR TA ≤ 25°C

ABOVE TA = 25°C

DRC

°C/W

2050 mW

21 mW/

°C

YZG

°C/W

1100 mW

12 mW/

°C

(1)

Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient

temperature is PD = [TJ(max) – TA] / θJA.

(2)

This thermal data is measured with high-K board (4 layers board according to JESD51-7 JEDEC standard).

over operating free-air temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply with

VI = 3.6 V, EN = VI, VSEL = VI, SYNC = GND, VSEL0[6] bit = 1.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

TPS62350/1/2/3/4/5

110

150

IO = 0 mA, Fast PFM mode enabled

µA

Device not switching

TPS62356

117

160

Operating quiescent

TPS62350/1/2/3/4/5

IO = 0 mA, Light PFM mode enabled

current

µA

Device not switching

TPS62356

TPS62350/1/2/3/4/5/6

IO = 0 mA, 3-MHz PWM mode operation

4.8

EN = GND, EN_DCDC bit = X

0.1

µA

I(SD)

Shutdown current

EN = VI, EN_DCDC bit = 0

6.5

µA

V(UVLO)

Undervoltage lockout threshold

2.20

2.3

ENABLE, VSEL, SDA, SCL, SYNC

VIH

High-level input voltage

1.2

VIL

Low-level input voltage

0.4

Ilkg

Input leakage current

Input tied to GND or VI

0.01

µA

POWER SWITCH

VI = V(GS) = 3.6 V, YZG package

250

500

TPS62350/1/2/3/4/5

VI = V(GS) = 3.6 V, DRC package

275

500

P-channel MOSFET on

rDS(on)

Ω

resistance

VI = V(GS) = 2.7 V, DRC package

350

750

TPS62356

VI = V(GS) = 3.2 V, YZG package

320

500

Ilkg

P-channel leakage current

V(DS) = 6 V

µA

VI = V(GS) = 3.6 V, YZG package

150

350

N-channel MOSFET on

rDS(on)

TPS62350/1/2/3/4/5/6

VI = V(GS) = 3.6 V, DRC package

165

350

Ω

resistance

VI = V(GS) = 2.7 V, YZG / DRC package

210

500

Ilkg

N-channel leakage current

V(DS) = 6 V

µA

R(DIS)

Discharge resistor for power-down sequence

Ω

TPS62350/1/2/3/4/5

1150

1350

1600

P-MOS current limit

2.7 V

≤ VI ≤ 5.5 V

TPS62356

1300

1550

1800

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Product Folder Link(s): TPS62350, TPS62351 TPS62352, TPS62353 TPS62354, TPS62355, TPS62356

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