6.42

7035L

High-Speed 8K x 18 Dual-Port Static RAM

Commercial Temperature Range

8

Feb.24.22

AC Electrical Characteristics Over the

Operating Temperature and Supply Voltage(5)

NOTES:

1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization, but is not production tested.

3. To access RAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM = VIL. Either condition must be valid for the

entire tEW time.

4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage

and temperature, the actual tDH will always be smaller than the actual tOW.

5. 'X' in part numbers indicates power rating (S or L).

Timing of Power-Up Power-Down

CE

4088 drw 06

tPU

ICC

ISB

tPD

50%

50%

.

Symbol

Parameter

7035X15

Com'l Only

7035X20

Com'l & Ind

Unit

Min.

Max.

Min.

Max.

WRITE CYCLE

tWC

Write Cycle Time

15

____

20

____

ns

tEW

Chip Enable to End-of-Write(3)

12

____

15

____

ns

tAW

Address Valid to End-of-Write

12

____

15

____

ns

tAS

Address Set-up Time(3)

0

____

0

____

ns

tWP

Write Pulse Width

12

____

15

____

ns

tWR

Write Recovery Time

0

____

0

____

ns

tDW

Data Valid to End-of-Write

10

____

15

____

ns

tHZ

Output High-Z Time(1,2)

____

10

____

12

ns

tDH

Data Hold Time(4)

0

____

0

____

ns

tWZ

Write Enable to Output in High-Z (1,2)

____

10

____

12

ns

tOW

Output Active from End-of-Write(1,2,4)

0

____

0

____

ns

tSWRD

SEM Flag Write to Read Time

5

____

5

____

ns

tSPS

SEM Flag Contention Window

5

____

5

____

ns

4088 tbl 13