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M36W108 Datasheet(PDF) 28 Page - STMicroelectronics |
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M36W108 Datasheet(HTML) 28 Page - STMicroelectronics |
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28 / 35 page ![]() M36W108T, M36W108B 28/35 Table 22. SRAM Write AC Characteristics (TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCS = 2.7V to 3.6V) Symbol Parameter SRAM Chip Unit 100 CL = 100pF Min Max tAVAV Write Cycle Time 100 ns tAVWL Address Valid to Write Enable Low 0 ns tAVWH Address Valid to Write Enable High 80 ns tWLWH Write Enable Pulse Width 70 ns tWHAX Write Enable High to Address Transition 0 ns tWHDX Write Enable High to Input Transition 0 ns tWHQX Write Enable High to Output Transition 0 ns tWLQZ Write Enable Low to Output Hi-Z 0 30 ns tAVE1L Address Valid to Chip Enable 1 Low 0 ns tAVE2H Address Valid to Chip Enable 2 High 0 ns tE1HAX Chip Enable 1 High to Address Transition 0 ns tE2LAX Chip Enable 2 Low to Address Transition 0 ns tDVWH Input Valid to Write Enable High 40 ns tDVE1H Input Valid to Chip Enable 1 High 40 ns tDVE2L Input Valid to Chip Enable 2 Low 40 ns Figure 17. SRAM Write AC Waveforms, W Controlled Note: Output Enable (G) = Low. AI02434 tAVAV tWHAX tDVWH INPUT VALID A0-A16 E1S W DQ0-DQ7 VALID E2S tAVWH tAVE1L tAVE2H tWLWH tAVWL tWLQZ tWHDX tWHQX |
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