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M58MR016C Datasheet(PDF) 39 Page - STMicroelectronics

Part # M58MR016C
Description  16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
PDF  51 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58MR016C Datasheet(HTML) 39 Page - STMicroelectronics

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M58MR016C, M58MR016D
Figure 15. Reset and Power-up AC Waveforms
AI05242
W,
VDD, VDDQ
tPLPH
E, G
tPHWL
tPHEL
tPHGL
tPHWL
tPHEL
tPHGL
tVDHPH
RP
L,
Power-up
Table 31. Reset and Power-up AC Characteristics
Note: 1. The device Reset is possible but not guaranteed if tPLPH < 100ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during Power-up or System reset.
Table 32. Program, Erase Times and Program, Erase Endurance Cycles
(TA = –40 to 85°C; VDD = VDDQ = 1.7V to 2.0V, VPP = VDD unless otherwise specified)
Note: 1. Max values refer to the maximum time allowed by the internal algorithm before error bit is set. Worst case conditions program or
erase should perform significantly better.
2. Excludes the time needed to execute the sequence for program instruction.
3. Same timing value if VPP = 12V.
Symbol
Parameter
Test Condition
Min
Unit
tPLPH
(1,2)
RP Pulse Width
100
ns
tPHEL
tPHLL
tPHWL
Reset High to Device Enabled
During Program and Erase
50
µs
Other Conditions
30
ns
tVDHPH
(3)
Supply Valid to Reset High
50
µs
Parameter
Min
Max (1)
Typ
Typical after
100k W/E Cycles
Unit
Parameter Block (4 K-Word) Erase (Preprogrammed)
2.5
0.5
1
sec
Main Block (32 K-Word) Erase (Preprogrammed)
10
1
3
sec
Bank Erase (Preprogrammed, Bank A)
4
sec
Bank Erase (Preprogrammed, Bank B)
15
sec
Chip Program (2)
40
sec
Chip Program (DPG, VPP = 12V)
(2)
20
sec
Word Program (3)
200
10
10
µs
Double Word Program
200
10
10
µs
Tetra Word Program
200
10
10
µs
Program/Erase Cycles (per Block)
100,000
cycles



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