32C85 datasheet(91/92 Pages) RENESAS

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REVISION HISTORY

Rev.

Date

Description

Page

Summary

M32C/85 Group (M32C/85, M32C/85T) Datasheet

A-4

• Table 5.28 Memory Expansion Mode and Microprocessor Mode tac1(AD-DB)

expression modified

• Table 5.44 Electrical Characteristics ICC standard value revised

• Table 5.47 Flash Memory Electrical Characteristics Topr value modified

All pages Package code changed: 144P6Q-A to PLQP0144KA-A, 100P6Q-A to

PLQP0100KB-A, 100P6S-A to PRQP0100JB-A

All pages "Low Voltage Detection Reset" changed to "Brown-out Detection Reset"

Special Function Register (SFR)

• The G0RB register Value after reset modified

• The TCSPR register Value after reset modified

Electrical Characteristics

• Table 5.2 Electrical Characteristics Parameter f(BCLK) and its values added

• Table 5.6 Flash Memory Version Electrical Characteristics Mesurement

condition changed

• Table 5.10 Memory Expansion Mode and Microprocessor Mode

tac1(RD-DB)

expression on Note 1 modified;

tac2(RD-DB) expression on Note 1 added

• Figure 5.3 VCC1=VCC2=5V Timing Diagram (1)

tw(ER) expression on Note 3

modified;

tcyc expression added

• Figure 5.4 VCC1=VCC2=5V Timing Diagram (2)

tac2(AD-DB) expression on Note

1 modified;

th(ALE-AD) expressions on Notes 1 and 2 modified; tcyc expression

added

• Table 5.28 Memory Expansion Mode and Microprocessor Mode

tac1(RD-DB)

expression on Note 1 modified;

tac2(RD-DB) expression on Note 1 added

• Figure 5.7 VCC1=VCC2=3.3V Timing Diagram (1)

tw(ER) expression on Note 3

modified;

tcyc expression added

• Figure 5.8 VCC1=VCC2=3.3V Timing Diagram (2)

tac2(RD-DB) expression on

Note 1 modified;

th(ALE-AD) expressions on Notes 1 and 2 modified; th(WR-CS)

expression on Note 2 modified;

tcyc expression added

• Table 5.43 Electrical Characteristics Parameter f(BCLK) and its values added

• Table 5.47 Flash Memory Version Electrical Characteristics Mesurement

condition changed

1.21 Jul.01, 2005

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