2SC5631 datasheet(2/10 Pages) RENESAS

2 / 10 page

2SC5631

Rev.3.00, Oct.20.2003, page 2 of 9

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

Collector to emitter voltage

VCEO

Emitter to base voltage

VEBO

1.5

Collector current

Collector power dissipation

800*

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

* When using alumina ceramic board (12.5 x 20 x 0.7 mm)

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector to base breakdown

voltage

V(BR)CBO

—

IC = 10

µA , IE = 0

Collector cutoff current

ICBO

——

µAVCB = 12 V , IE = 0

Collector cutoff current

ICEO

——

VCE = 6 V , RBE =

∞

Emitter cutoff current

IEBO

——

µAVEB = 1.5 V , IC = 0

DC current transfer ratio

hFE

120

160

VCE = 5 V , IC = 50 mA

Collector output capacitance

Cob

—

1.6

2.2

VCB = 5 V , IE = 0

f = 1 MHz

Gain bandwidth product

811

—

GHz

VCE = 5 V , IC = 50 mA

f = 1 GHz

Power gain

—

VCE = 5 V , IC = 50 mA

f = 900 MHz

Noise figure

—

1.2

1.9

VCE = 5 V , IC = 5 mA

f = 900 MHz

2SC5631 Datasheet(PDF) 2 Page - Renesas Technology Corp

2SC5631 Datasheet(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL