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SH7052 Datasheet(PDF) 753 Page - Renesas Technology Corp |
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SH7052 Datasheet(HTML) 753 Page - Renesas Technology Corp |
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753 / 919 page ![]() 727 CE OE CE A18 to A0 OE WE I/O7 to I/O0 Note: Data is latched on the rising edge of WE. tceh twep tf tr tces tnxtc Address stable tds tdh Command write Memory read mode Figure 20.21 Timing Waveforms for Memory Read after Memory Write Table 20.16 AC Characteristics in Transition from Memory Read Mode to Another Mode (Conditions: V CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C) Item Symbol Min Max Unit Notes Command write cycle t nxtc 20 µs CE hold time t ceh 0ns CE setup time t ces 0ns Data hold time t dh 50 ns Data setup time t ds 50 ns Write pulse width t wep 70 ns WE rise time t r 30 ns WE fall time t f 30 ns |
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