SH7052 datasheet(761/919 Pages) RENESAS

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735

tosc1

tbmv

tdwn

VCC

RES

FWE

Memory read

mode

Command

wait state

Auto-program mode

Auto-erase mode

Command wait state

Normal/abnormal

end decision

Note: In modes other than auto-program mode and auto-erase mode, the FWE input pin should be

driven low.

Figure 20.28 Oscillation Stabilization Time, Boot Program Transfer Time, and

Power-Down Sequence

20.11.9

Notes on Memory Programming

1. When programming addresses which have previously been programmed, carry out auto-

erasing before auto-programming.

2. When performing programming using programmer mode on a chip that has been

programmed/erased in an on-board programming mode, auto-erasing is recommended before

carrying out auto-programming.

Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi.

For other chips for which the erasure history is unknown, it is recommended that auto-

erasing be executed to check and supplement the initialization (erase) level.

2. Auto-programming should be performed once only on the same address block.

Additional programming cannot be performed on previously programmed address

blocks.

SH7052 Datasheet(PDF) 761 Page - Renesas Technology Corp