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H83069RF Datasheet(PDF) 188 Page - Renesas Technology Corp |
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H83069RF Datasheet(HTML) 188 Page - Renesas Technology Corp |
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188 / 1003 page ![]() Rev. 5.0, 09/04, page 166 of 978 φ 4)5n φ 4)5n φ 4)5n φ 4)5n Note: n = 2 to 5 DRAM access cycle CBR refresh cycle DRCRA write cycle External bus released High-impedance (a) Access to DRAM space with a different row address (b) CAS-before-RAS refresh cycle (c) BE bit or RDM bit cleared to 0 in DRCRA (d) External bus released Figure 6.24 RAS RAS RAS RASn Negation Timing when RAS Down Mode is Selected |
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