Document Number: 94367

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Revision: 29-Apr-08

7

ST173SPbF Series

Inverter Grade Thyristors

(Stud Version), 175 A

Vishay High Power Products

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

Pulse Basewidth (µs)

20 joules per pulse

0.5

0.3

0.2

7.5

10

100

1000

10 000

10

100

1000

10 000

t

p

ST173S Series

Sinusoidal pulse

0.1

2

100 000

1

4

Pulse Basewidth (µs)

10

100

1000

10 000

10

100

1000

10 000

100 000

0.1

0.2

0.5

2 3

1

5 10

20 joules per pulse

t

p

ST173S Series

Rectangular pulse

dI/dt = 50 A/µs

0.3

0.4

0.1

1

10

100

0.001

Instantaneous Gate Current (A)

0.01

0.1

1

10

100

(b)

V

GD

I

GD

(1)

(2)

(3)

Device: ST173S Series

(4)

Frequency limited by P

G(AV)

(1) P

(2) P

(3) P

(4) P

Rectangular gate pulse

a) Recommended load line for

rated dI/dt: 20 V, 10

Ω; t

b) Recommended load line for

≤ 30 % rated dI/dt: 10 V, 10 Ω

t

(a)