BLF573S datasheet(3/14 Pages) NXP

3 / 14 page

BLF573S_1

Preliminary data sheet

Rev. 01 — 8 December 2008

3 of 14

NXP Semiconductors

BLF573S

HF / VHF power LDMOS transistor

Characteristics

Table 6.

DC characteristics

Tj = 25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 3.75 mA

110

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 375 mA

1.25

1.7

2.25

VGSq

gate-source quiescent voltage

VDS = 50 V; ID = 900 mA

1.45

1.95

2.45

IDSS

drain leakage current

VGS =0V; VDS = 50 V

4.2

µA

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

IGSS

gate leakage current

VGS =11V; VDS = 0 V

420

gfs

forward transconductance

VDS = 10 V; ID = 18.75 A

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 3.75 V;

ID = 12.49 A

0.09

Ω

Crs

feedback capacitance

VGS =0V; VDS =50V;

f=1MHz

2.3

Ciss

input capacitance

VGS =0V; VDS =50V;

f=1MHz

300

Coss

output capacitance

VGS =0V; VDS =50V;

f=1MHz

103

Table 7.

RF characteristics

Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase =25 °C;

unless otherwise speciﬁed; in a class-AB production test circuit

Symbol Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 300 W

26.5

RLin

input return loss

PL = 300 W

ηD

drain efﬁciency

PL = 300 W

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