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ERT801 Datasheet(PDF) 5 Page - Seoul Semiconductor |
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ERT801 Datasheet(HTML) 5 Page - Seoul Semiconductor |
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5 / 10 page ![]() Document No. : SSC-QP-7-07-24 (Rev.00) 2. Absolute maximum ratings oC -40 ~ +100 T stg Storage Temperature oC -40 ~ +100 T opr Operating Temperature V 5 V R Reverse Voltage mA 90 I FM *2 Peak Forward Current mA 30 I F Forward Current mW 80 P d Power Dissipation Unit Value Symbol Parameter *1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. *2 IFM was measured at TW ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio. 3. Electric characteristics deg. - 120 - I F =20mA 2 θ ½ Viewing Angle *2 nm - 18 - I F =20mA ∆λ Spectral Bandwidth 50% nm 640 635 630 I F =20mA λ d Dominant Wavelength nm - 650 - I F =20mA λ P Peak Wavelength mcd 130 90 50 I F =20mA I V Luminance Intensity *1 µA 10 - - V R=5V I R Reverse Current V 2.3 2.0 1.7 I F =20mA V F Forward Voltage Unit Max Typ Min Condition Symbol Parameter *1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10% *2. 2 θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity. |
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