LTC3499/LTC3499B

3

3499f

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: Specification is guaranteed by design and not 100% tested in

production.

Note 3:The LTC3499E/LTC3499BE are guaranteed to meet device

specifications from 0

°C to 85°C. Specifications over the –40°C to 85°C

operating temperature are assured by design, characterization and

correlation with statistical process controls.

Note 4: These ICs include overtemperature protection that is intended to

protect the devices during momentary overload conditions. Junction

temperatures will exceed 125

°C when overtemperature protection is

active. Continuous operation above the specified maximum operating

temperature range may impair device reliability.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

NMOS Switch Leakage

0.1

5

µA

PMOS Switch Leakage

0.1

5

µA

NMOS Switch On Resistance

0.45

Ω

0.4

Ω

PMOS Switch On Resistance

0.58

Ω

0.45

Ω

NMOS Current Limit

●

0.75

A

Current Limit Delay to Output

Note 2

60

ns

Maximum Duty Cycle

●

80

85

%

Minimum Duty Cycle

●

0%

Frequency Accuracy

●

1

1.2

1.4

MHz

Error Amplifier Transconductance

40

µmhos

Error Amplifier Source Current

–5

µA

Error Amplifier Sink Current

5

µA

SS Current Source

–3

µA

6.8

V

400

mV

Shutdown

SHDN Input Low

●

0.2

V

SHDN Input High

Measured at SW

●

1.2

V

SHDN Input Current

1

µA

Reverse Battery

●

5

µA

●

–5

µA

SHDN Reverse-Battery Current

●

–5

µA