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BQ4285EP Datasheet(PDF) 13 Page - Texas Instruments

Part # BQ4285EP
Description  Enhanced RTC With NVRAM Control
PDF  32 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ4285EP Datasheet(HTML) 13 Page - Texas Instruments

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Recommended DC Operating Conditions—bq4285L (TA = TOPR)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
VCC
Supply voltage
2.7
3.15
3.6
V
VIL
Input low voltage
-0.3
-
0.6
V
VIH
Input high voltage
2.2
-
VCC + 0.3
V
VBC
Backup cell voltage
2.4
-
4.0
V
Notes:
Typical values indicate operation at TA = 25°C.
Potentials are relative to VSS.
Recommended DC Operating Conditions—bq4285E (TA = TOPR)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
VCC
Supply voltage
4.5
5.0
5.5
V
VIL
Input low voltage
-0.3
-
0.8
V
VIH
Input high voltage
2.2
-
VCC + 0.3
V
VBC
Backup cell voltage
2.5
-
4.0
V
Notes:
Typical values indicate operation at TA = 25°C.
Potentials are relative to VSS.
Crystal Specifications—bq4285E/L (DT-26 or Equivalent)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
fO
Oscillation frequency
-
32.768
-
kHz
CL
Load capacitance
-
6
-
pF
TP
Temperature turnover point
20
25
30
°C
k
Parabolic curvature constant
-
-
-0.042
ppm/°C
Q
Quality factor
40,000
70,000
-
R1
Series resistance
-
-
45
K
Ω
C0
Shunt capacitance
-
1.1
1.8
pF
C0/C1
Capacitance ratio
-
430
600
DL
Drive level
-
-
1
µW
∆f/fO
Aging (first year at 25°C)
-
1
-
ppm
bq4285E/L



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