T410H datasheet(3/9 Pages) STMICROELECTRONICS

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T410H

Characteristics

Doc ID 15712 Rev 1

3/9

Table 4.

Static characteristics

Symbol

Test conditions

Value

Unit

(1)

ITM = 5.6 A, tp = 380 µs

Tj = 25 °C

MAX.

1.5

Vt0

(1)

Threshold voltage

Tj = 150 °C

MAX.

0.80

(1)

Dynamic resistance

Tj = 150 °C

MAX.

80.0

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX.

µA

Tj = 150 °C

MAX.

2.2

VD/VR = 400 V (at peak mains voltage) Tj = 150 °C

MAX.

1.75

VD/VR = 200 V (at peak mains voltage) Tj = 150 °C

MAX.

1.5

for both polarities of A2 referenced to A1.

Table 5.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

2.20

°C/W

Rth(j-a)

Junction to ambient

Figure 1.

Maximum power dissipation versus

on-state rms current (full cycle)

Figure 2.

On-state rms current versus case

temperature (full cycle)

P(W)

012

IT(RMS)(A)

T(RMS)(A)

100

125

150

TC(°C)

Figure 3.

On-state rms current versus

ambient temperature (free air

convection, full cycle)

Figure 4.

Relative variation of thermal

impedance, versus pulse duration

T(RMS)(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

125

150

Ta(°C)

K=[Zth/Rth]

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Zth(j-a)

Zth(j-c)

tp(s)

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