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T410H Datasheet(PDF) 5 Page - STMicroelectronics |
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T410H Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 9 page ![]() T410H Characteristics Doc ID 15712 Rev 1 5/9 Figure 11. Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values) Figure 12. Relative variation of static dV/dt immunity versus junction temperature (dI/dt) c [(dV/dt)c ] / Specified (dI/dt)c 0 1 2 3 4 0.1 1.0 10.0 100.0 (dV/dt)C (V/µs) dV/dt [T j]/ dV/dt[T j=150 °C] 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 25 50 75 100 125 150 V D=VR=400 V Tj(°C) Figure 13. Variation of leakage current versus junction temperature for different values of blocking voltage Figure 14. Acceptable case to ambient thermal resistance versus repetitive peak off-state voltage IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=150°C; 600V] 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 25 50 75 100 125 150 V DRM=VRRM=400 V V DRM=VRRM=400 V V DRM=VRRM=600 V V DRM=VRRM=600 V V DRM=VRRM=200 V V DRM=VRRM=200 V Tj(°C) R th(c-a)(°C/W) 0 10 20 30 40 50 60 70 80 200 300 400 500 600 R th(j-c)=2.2 °C/W T J=150 °C VAC PEAK(V) |
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