APT100GT120JR datasheet(3/6 Pages) MICROSEMI

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Typical Performance Curves

APT100GT120JR

100

125

150

250μs PULSE

TEST<0.5 % DUTY

CYCLE

J = 25°C.

250μs PULSE TEST

<0.5 % DUTY CYCLE

GE = 15V.

250μs PULSE TEST

<0.5 % DUTY CYCLE

C = 50A

C = 100A

C = 200A

C = 50A

C = 100A

C = 200A

13V

12V

15V

C = 100A

J = 25°C

CE = 960V

CE = 600V

CE = 240V

J= 25°C

J= -55°C

GE = 15V

J= 150°C

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics (T

= 25°C)

J= 25°C

J= 125°C

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 2, Output Characteristics (T

= 25°C)

11V

10V

J= 125°C

GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage

GATE CHARGE (nC)

FIGURE 4, Gate charge

J, Junction Temperature (°C)

FIGURE 6, On State Voltage vs Junction Temperature

C, Case Temperature (°C)

FIGURE 8, DC Collector Current vs Case Temperature

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

-.50 -.25

75 100 125 150

J, JUNCTION TEMPERATURE

FIGURE 7, Threshold Voltage vs Junction Temperature

100

120

100

125

150

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