Dynamic Characteristics

APT100GT120JR

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

C

ies

Input Capacitance

V

f = 1MHz

-

6700

-

pF

C

oes

Output Capacitance

-

6530

-

C

res

Reverse Transfer Capacitance

-

4380

-

V

GEP

Gate-to-Emitter Plateau Voltage

Gate Charge

V

V

I

-10

-

V

Q

g

Total Gate Charge

-

685

-

nC

Q

ge

Gate-Emitter Charge

-75

-

Q

gc

Gate-Collector Charge

-

400

-

SSOA

Switching Safe Operating Area

T

L = 100μH, V

150

A

t

d(on)

Turn-On Delay Time

Inductive Switching (25°C)

V

V

I

R

T

-50

-

ns

t

r

Current Rise Time

-

100

-

t

d(off)

Turn-Off Delay Time

-

630

-

t

f

Current Fall Time

-36

-

E

on1

-

TBD

-

μJ

E

on2

-

17600

-

E

off

-

7240

-

t

d(on)

Turn-On Delay Time

Inductive Switching (125°C)

V

V

I

R

T

-50

-

ns

t

r

Current Rise Time

-

100

-

t

d(off)

Turn-Off Delay Time

-

710

-

t

f

Current Fall Time

-37

-

E

on1

-

TBD

-

μJ

E

on2

-

22380

-

E

off

-

10950

-

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

R

Junction to Case

-

-

0.22

°C/W

W

T

Package Weight

-

29.2

-

gm

V

Isolation

2500

-

-

Volts

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 E

loss. (See Figures 21, 22.)

6 E

7 R

Thermal and Mechanical Characteristics

Microsemi reserves the right to change, without notice, the specifications and information contained herein.