Symbol

Parameter

Ratings

Unit

V

CES

Collector-Emitter Voltage

1200

Volts

V

GE

Gate-Emitter Voltage

±20

I

C1

Continuous Collector Current @ T

123

Amps

I

C2

Continuous Collector Current @ T

67

I

CM

200

SSOA

Switching Safe Operating Area @ T

200A @ 1200V

P

D

Total Power Dissipation

570

Watts

T

Operating and Storage Junction Temperature Range

-55 to 150

°C

T

L

Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.

300

Maximum Ratings

All Ratings: T

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

V

(BR)CES

Collector-Emitter Breakdown Voltage (V

1200

-

-

Volts

V

GE(TH)

Gate Threshold Voltage (V

4.5

5.5

6.5

V

CE(ON)

Collector Emitter On Voltage (V

2.7

3.2

3.7

Collector Emitter On Voltage (V

-

4.0

-

I

CES

Collector Cut-off Current (V

2

-

-

100

μA

Collector Cut-off Current (V

2

-

-

TBD

I

GES

Gate-Emitter Leakage Current (V

-

-

600

nA

R

G(int)

Integrated Gate Resistor

-

5

-

Ω

Static Electrical Characteristics

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

.

Microsemi Website - http://www.microsemi.com

APT100GT120JR

ultrafast switching speed.

Features

• Low Forward Voltage Drop

• Low Tail Current

• Integrated Gate Resistor

Low EMI, High Reliability

• RoHS Compliant

• RBSOA and SCSOA Rated

• High Frequency Switching to 50KHz

• Ultra Low Leakage Current

SO

T-

22

7

file # E145592

"UL Recognized"

G

E

E

C

Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel

IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.