BUS98 BUS98A

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0) L = 25 mH

BUS98

BUS98A

VCEO(sus)

400

450

—

—

—

—

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C)

ICEV

—

—

—

—

0.4

4.0

mAdc

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 10 Ω)

TC = 25 _C

TC = 125 _C

ICER

—

—

—

—

1.0

6.0

mAdc

Emitter Cutoff Current

(VEB = 7 Vdc, IC = 0)

IEBO

—

—

0.2

mAdc

Emitter–Base Breakdown Voltage

(IE = 100 mA – IC = 0)

VEBO

7.0

—

—

Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 13

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 20 Adc, VCE = 5 Vdc)

BUS98

(IC = 16 Adc, VCE = 5 V)

BUS98A

hFE

8

—

—

—

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 4 Adc)

BUS98

(IC = 30 Adc, IB = 8 Adc)

(IC = 20 Adc, IB = 4 Adc, TC = 100_C)

(IC = 16 Adc, IB = 3.2 Adc)

BUS98A

(IC = 24 Adc, IB = 5 Adc)

(IC = 16 Adc, IB = 3.2 Adc, TC = 100_C)

VCE(sat)

—

—

—

—

—

—

—

—

—

—

—

—

1.5

3.5

2.0

1.5

5.0

2.0

Vdc

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 4 Adc)

BUS98

(IC = 20 Adc, IB = 4 Adc, TC = 100_C)

(IC = 16 Adc, IB = 3.2 Adc)

BUS98A

(IC = 16 Adc, IB = 3.2 Adc, TC = 100_C)

VBE(sat)

—

—

—

—

—

—

—

—

1.6

1.6

1.6

1.6

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)

Cob

—

—

700

pF

SWITCHING CHARACTERISTICS

Restive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC = 20 A,

IB1 = 4.0 A, tp = 30 µs,

Duty Cycle

v 2%, VBE(off) = 5 V)

(for BUS98A: IC = 16 A, Ib1 = 3.2 A)

td

—

0.1

0.2

µs

Rise Time

(VCC = 250 Vdc, IC = 20 A,

IB1 = 4.0 A, tp = 30 µs,

Duty Cycle

v 2%, VBE(off) = 5 V)

(for BUS98A: IC = 16 A, Ib1 = 3.2 A)

tr

—

0.4

0.7

Storage Time

IB1 = 4.0 A, tp = 30 µs,

Duty Cycle

v 2%, VBE(off) = 5 V)

(for BUS98A: IC = 16 A, Ib1 = 3.2 A)

ts

—

1.55

2.3

Fall Time

v 2%, VBE(off) = 5 V)

(for BUS98A: IC = 16 A, Ib1 = 3.2 A)

tf

—

0.2

0.4

Inductive Load, Clamped (Table 1)

Storage Time

IC(pk) = 20 A

(BUS98)

Ib1 = 4 A

VBE(off) = 5 V,

VCE(c1) = 250 V)

IC(pk) = 16 A

(BUS98A)

lB1 = 3.2 A)

(TC = 25_C)

tsv

—

1.55

—

µs

Fall Time

IC(pk) = 20 A

(BUS98)

Ib1 = 4 A

VBE(off) = 5 V,

VCE(c1) = 250 V)

IC(pk) = 16 A

(BUS98A)

lB1 = 3.2 A)

(TC = 25_C)

tfi

—

0.06

—

Storage Time

VBE(off) = 5 V,

VCE(c1) = 250 V)

IC(pk) = 16 A

(BUS98A)

lB1 = 3.2 A)

(TC = 100_C)

tsv

—

1.8

2.8

Crossover Time

VCE(c1) = 250 V)

IC(pk) = 16 A

(BUS98A)

lB1 = 3.2 A)

(TC = 100_C)

tc

—

0.3

0.6

Fall Time

lB1 = 3.2 A)

_C)

tfi

—

0.17

0.35

(1) Pulse Test: PW = 300

µs, Duty Cycle v 2%.