CHA2190

Ref :

DSCHA21902036 -05-Feb.-02-

1/9

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

20-30GHz Low Noise Amplifier

self biased

GaAs Monolithic Microwave IC

Description

The circuit is a two-stages self biased wide

band monolithic low noise amplifier.

The circuit is manufactured with a standard

HEMT process : 0.25µm gate length, via

holes through the substrate, air bridges and

electron beam gate lithography.

It is supplied in chip form.

Main Feature

§ Broad band performance 20-30GHz

§ 2.2dB noise figure

§ 15dB gain, ± 0.5dB gain flatness

§ Low DC power consumption, 50mA

§ 20dBm 3rd order intercept point

Main Characteristics

On wafer typical measurement

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

NF

Noise figure at freq : 40GHz

2.2

3

dB

G

Gain

13

15

dB

∆G

Gain flatness

± .0.5

± 1

dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !

-26

-22

-18

-14

-10

-6

-2

2

6

10

14

18

14

16

18

20

22

24

26

28

30

32

34

36

Frequency ( GHz )

dBS11

dBS21

dBS22

NF