CHA2295

Ref. : DSCHA22952240 28-Aug.-02

1/7

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

6 - 11GHz Buffer Splitter Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2295 is a broadband buffer splitter

three-stage monolithic amplifier.

It is designed for a wide range of applications,

from

military to

commercial

communication

systems. The backside of the chip is both RF

and

DC

grounds.

This

helps

simplify the

assembly process.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Broadband performance : 6 -11GHz

■ 14dBm saturated output power.

■ 18dB ±1.5dB gain flatness

■ Good broadband matching

■ Low DC power consumption, 160mA @ 3.5V

■ Chip size :

2.26 X 1.33 X 0.10 mm

OUT 1

OUT 2

Vd

Vg

IN

Typical on wafer measurements : Gain (dB)

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

6

11

GHz

G

Small signal gain

15

18

dB

Psat

Saturated Output power

12

14

dBm

Bias current

160

220

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

10

11

12

13

14

15

16

17

18

19

20

12

34

56

78

9

10 11 12 13 14 15 16 17 18

Frequency (GHz)

Gain channel 1

Gain channel 2