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CHA2296 Datasheet(PDF) 2 Page - United Monolithic Semiconductors

Part # CHA2296
Description  9- 19GHz Buffer Splitter Amplifier
PDF  7 Pages
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Manufacturer  UMS [United Monolithic Semiconductors]
Direct Link  http://www.ums-gaas.com
Logo UMS - United Monolithic Semiconductors

CHA2296 Datasheet(HTML) 2 Page - United Monolithic Semiconductors

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CHA2296
9-19GHz Buffer Splitter Amplifier
Ref. : DSCHA22962044 13-Feb.-02
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V Vg tuned for Id=190mA
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
9
19
GHz
G
Small signal gain (1)
13
16
dB
∆G
Small signal gain flatness (1)
±1.5
dB
Is
Reverse isolation (1)
60
dB
Ic
Isolation between channels (1)
20
dB
Psat
Saturated output power (1)
12
14
dBm
VSWRin
Input VSWR (1)
2.0:1
VSWRout
Output VSWR (1)
2.0:1
Id_small signal Bias current
190
250
mA
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal
4.0
V
Ids
Drain bias current_small signal
300
mA
Vgs
Gate bias voltage
-2 to +0.4
V
Vdg
Negative Drain Gate voltage (= Vds – Vgs)
+5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.



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