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CHA3092 Datasheet(PDF) 4 Page - United Monolithic Semiconductors |
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CHA3092 Datasheet(HTML) 4 Page - United Monolithic Semiconductors |
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4 / 7 page ![]() CHA3092 20-33GHz Medium Power Amplifier Ref. : DSCHA30920356 21-Dec.-00 4/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical On wafer Power Measurements Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt, Id = 300 mA. On wafer Pin / Pout at 20 GHz 15 16 17 18 19 20 21 22 23 24 25 -3 -2 -1 0 1 2 3 4 5 Pin ( dBm ) 0 3 6 9 12 15 18 21 24 27 30 On wafer Pin / Pout at 22 GHz 15 16 17 18 19 20 21 22 23 24 25 -3 -2 -1 0 1 2 3 4 5 Pin ( dBm ) 0 3 6 9 12 15 18 21 24 27 30 Notes : 1- Test conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt. 2- Power measurements are typical ( solid lines ). P.A.E. is representative of on wafer measurements on a typical circuit ( Dotted lines ). On wafer Pin / Pout at 26 GHz 15 16 17 18 19 20 21 22 23 24 25 -3 -2 -1 01 23 45 Pin ( dBm ) 0 3 6 9 12 15 18 21 24 27 30 On wafer Pin / Pout at 28 GHz 15 16 17 18 19 20 21 22 23 24 25 -3 -2 -1 01 23 45 Pin ( dBm ) 0 3 6 9 12 15 18 21 24 27 30 |
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