PMD4002K_1

© NXP B.V. 2006. All rights reserved.

Product data sheet

Rev. 01 — 3 November 2006

3 of 15

NXP Semiconductors

PMD4002K

MOSFET driver

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

[3]

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

NPN transistor

collector-base voltage

open emitter

-

40

V

collector-emitter voltage

open base

-

40

V

collector current

-

0.6

A

peak collector current

single pulse;

-1

A

base current

-

0.2

A

peak base current

single pulse;

-

0.3

A

total power dissipation

[1] -

250

mW

[2] -

330

mW

[3] -

445

mW

Diode

forward current

-

−0.2

A

repetitive peak forward

current

-

−0.6

A

non-repetitive peak forward

current

square wave

−9A

−3A

-

−1.7

A

Device

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C