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LTC3615 Datasheet(PDF) 4 Page - Linear Technology |
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LTC3615 Datasheet(HTML) 4 Page - Linear Technology |
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4 / 32 page ![]() LTC3615 3615f SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS jSW1–SW2 Output Phase Shift Between SW1 and SW2 VPHASE < 0.15 • SVIN 0 Deg 0.35 • SVIN < VPHASE < 0.65 • SVIN 90 Deg VPHASE > 0.85 • SVIN 180 Deg VSRLIM Voltage at SRLIM to Enable DDR Mode (Note 9) SVIN – 0.3 V VMODE (Note 9) Internal Burst Mode Operation 0.3 V Pulse-Skipping Mode SVIN – 0.3 V Forced Continuous Mode 1.1 SVIN • 0.58 V External Burst Mode Operation 0.5 0.85 V PGOOD Power Good Voltage Windows TRACK/SSx = SVIN, Entering Window VFBx Ramping Up VFBx Ramping Down –3.5 3.5 –6 6 % % TRACK/SSx = SVIN, Leaving Window VFBx Ramping Up VFBx Ramping Down 9 –9 11 –11 % % tPGOOD Power Good Blanking Time Entering/Leaving Window 70 105 140 µs RPGOOD Power Good Pull-Down On-Resistance I = 10mA 8 12 30 Ω VRUN Enable Pin Input High Input Low l l 1 0.4 V V Pull-Down Resistance 4 MΩ elecTrical characTerisTics Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3615 is tested under pulsed load conditions such that TJ ≈ TA. The LTC3615E is guaranteed to meet performance specifications over the 0°C to 85°C operating junction temperature range. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3615I is guaranteed to meet specifications over the full –40°C to 125°C operating junction temperature range. Note that the maximum ambient temperature is determined by specific operating conditions in conjunction with board layout, the rated package thermal resistance and other environmental factors. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environmental factors. The junction temperature (TJ, in °C) is calculated from the ambient temperature (TA, in °C) and power dissipation (PD, in watts) according to the formula: TJ = TA + (PD • θJA) where θJA (in °C/W) is the package thermal impedence. Note 3: This parameter is tested in a feedback loop which servos VFB1,2 to the midpoint for the error amplifier (VITH1,2 = 0.75V). Note 4: External compensation on ITH pin. Note 5: Tying the ITH pin to SVIN enables internal compensation and AVP mode for the selected channel. Note 6: Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency. Note 7: See description of the TRACK/SS pin in the Pin Functions section. Note 8: When sourcing current, the average output current is defined as flowing out of the SW pin. When sinking current, the average output current is defined as flowing into the SW pin. Sinking mode requires the use of forced continuous mode. Note 9: See description of the MODE pin in the Pin Functions section. Note 10: Guaranteed by design and correlation to wafer level measurements for QFN packages. Note 11: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability or permanently damage the device. The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2), SVIN = PVINx = 3.3V, RT = 178k, RSRLIM = 40.2k, unless otherwise specified (Notes 1, 2, 11). |
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