IP4359CX4

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Product data sheet

Rev. 1 — 6 August 2010

3 of 12

NXP Semiconductors

IP4359CX4

Dual channel low capacitance ESD protection

4.

Limiting values

[1]

Device is qualified with 1000 pulses of

±15 kV contact discharges each, according to the IEC61000-4-2

model and far exceeds the specified level 4 (8 kV contact discharge).

5.

Characteristics

[1]

Guaranteed by design.

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

input voltage

pins A1 and A2 to ground (B1, B2)

−0.5 +5.5 V

electrostatic discharge

voltage

pins A1 and A2 to ground (B1, B2)

contact discharge

[1]

−15 +15

kV

air discharge

[1]

−20 +20

kV

IEC 61000-4-2 level 4;

pins A1 and A2 to ground (B1, B2)

contact discharge

−8

+8

kV

air discharge

−15 +15

kV

storage temperature

−55 +150 °C

-

260

°C

ambient temperature

−35 +85

°C

Table 4.

Electrical characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

input/output to ground

capacitance

pins A1 and A2 to ground (B1,

[1] -

1.3

1.5

pF

reverse leakage current

pins A1 and A2 to ground (B1,

-

-

100

nA

Zener diode breakdown

voltage

6

-

9

V

forward voltage

-

0.7

-

V

dynamic resistance

positive discharge

-

0.45 -

Ω

negative discharge

-

0.45 -

Ω