Preliminary
12-10
RF2506
Rev A1 000908
12
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.8
VDC
Power Down Voltage (VPD)-0.5 to +5.8
VDC
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
Operating Frequency
10 to 1000
MHz
560MHz Operation
T=25 °C, VCC=2.7V, ZLOAD=50Ω,
VPD=2.7V, O/P terminated into LC.
Characterized @ 560MHz as per eval board.
Data will change depending on frequency of
operation and resonant tank network.
Output Power
-3
dBm
2nd Harmonic
-27
dBc
3rd Harmonic
-35
dBc
Load Pulling
50
kHzP-P
Into 1.75 VSWR Load
VCC Pushing
190
kHz/V
Supply sweep from 2.7V to 3.2V
Phase Noise
-110
dBc
100kHz Offset. Better phase noise is achiev-
able by increasing the loaded Q of the reso-
nator circuit.
-90
dBc
10kHz Offset
560MHz Operation
T=25 °C, VCC=2.7V, ZLOAD=50Ω,
VPD=2.7V, O/P terminated in 50Ω.
Characterized @ 560MHz as per eval board.
Data will change depending on frequency of
operation and resonant tank network.
Output Power
-7
dBm
2nd Harmonic
-11.5
dBc
3rd Harmonic
-15.5
dBc
Load Pulling
35
kHzP-P
Into 1.75 VSWR Load
VCC Pushing
160
kHz/V
Supply sweep from 2.7V to 3.2V
Phase Noise
-107
dBc
100kHz Offset. Better phase noise is achiev-
able by increasing the loaded Q of the reso-
nator circuit.
-88
dBc
10kHz Offset
Power Supply
Operating Voltage
2.7 to 3.6
VDC
At 2.2V and -40°C, output power will be
reduced to typically -11dBm.
Supply Current
9
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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