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KB8527 Datasheet(PDF) 12 Page - Samsung semiconductor

Part # KB8527
Description  1 CHIP CLP SUBSYSTEM IC
PDF  21 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KB8527 Datasheet(HTML) 12 Page - Samsung semiconductor

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KB8527B
1 CHIP CLP SUBSYSTEM IC
Expander
(Vcc = 3.6V, fc = 1KHz, Ta = 25oC, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Continued)
Characteristic
Min
Typ
Max
Unit
Symbol
Test Conditions
Compressor Output
Distortion
Mute Attenuation Ratio
THDCOM
1.0
0.5
%
ATTMUTE
Compressor Limiting
Voltage
VLIM(COM)
ALC
VALC
Vinc = 0dB
Vinc = 0dB
Vinc = Variable
IALC = 8uA ( RALC = 120K
Ω)
80
1.41
1.65
1.83
Vp-p
280
330
60
dB
380
mVrms
-
Splatter filter
Vo(SF)
VINC = 13mVrms = 0 dB
255
300
345
mVrms
dB
Standard Output Voltage
V
O(EXP)
Vin
E = 30mVrms
0dB
mVrms
Expander Gain
Difference
∆ G
V1(EXP)
∆ G
V2(EXP)
Vin
E = -10dB
104
130
156
∆ G
V3(EXP)
Vin
E = -20dB
Vin
E = -30dB
0.5
1.0
1.5
0
0
0
1.0
2.0
3.0
dB
dB
Expander Output
Distortion
THDEXP
VinE = 0dB
1.0
0.5
%
-
Characteristic
Min
Typ
Max
Unit
Symbol
Test Conditions
Mute Attenuation Ratio
ATTMUTE
80
60
dB
Expander Maximum
Output Voltage
VinE = Variable
THD = 10%
mVrms
VinE = 0dB
VOEXP(MAX)
500
600
-
-
Speaker amp output 1
Speaker amp output 2
Vo( SA1)
VINE = 30mVrms = 0 dB
VINE = 30mVrms = 0 dB
104
104
130
130
156
156
mVrms
mVrms
Vo( SA1)



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