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2SC5551 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SC5551 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 5 page ![]() Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications Ordering number:ENN6328 2SC5551 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21000TS (KOTO) TA-2665 No.6328–1/5 4.5 1.6 0.5 0.4 1.5 3.0 1.5 0.4 0.75 3 2 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2038A [2SC5551] Features · High fT : (fT=3.5GHz typ). · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max). ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Continued on next page. * : The 2SC5551 is classified by 50mA hFE as follows : r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 4V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 3V e g a t l o V e s a B - o t - r e t t i m EV O B E 2V t n e r r u C r o t c e ll o CIC 0 0 3A m ) e s l u p ( t n e r r u C r o t c e ll o CI P C 0 0 6A m n o i t a p i s s i D r o t c e ll o CPC m m 0 5 2 ( d r a o b c i m a r e c a n o d e t n u o M 2 × ) m m 8 . 03 . 1W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 2 = E 0 =0 . 1A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 1 = C 0 =0 . 5A µ n i a G t n e r r u C C D h E F 1V E C I , V 5 = C A m 0 5 = 0 90 7 2 h E F 2V E C I , V 5 = C A m 0 0 3 = 0 2 g n i k r a MB E k n a RE F h E F 0 8 1 o t 0 90 7 2 o t 5 3 1 |
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