R8C26 datasheet(29/75 Pages) RENESAS

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R8C/26 Group, R8C/27 Group

5. Electrical Characteristics

Rev.2.10

Sep 26, 2008

Page 27 of 69

REJ03B0168-0210

NOTES:

1. VCC = 2.7 to 5.5 V at Topr = -20 to 85

°C (N version) / -40 to 85°C (D version), unless otherwise specified.

2. Definition of programming/erasure endurance

The programming and erasure endurance is defined on a per-block basis.

If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte

writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the

programming/erasure endurance still stands at one.

However, the same address must not be programmed more than once per erase operation (overwriting prohibited).

3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times

is the same as that in program ROM.

5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential

addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,

when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups

before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A and B can further

reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the

number of erase operations to a certain number.

6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase

command at least three times until the erase error does not occur.

7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

8. -40

°C for D version.

9. The data hold time includes time that the power supply is off or the clock is not supplied.

Table 5.5

Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

−

Program/erase endurance(2)

10,000(3)

−−

times

−

Byte program time

(program/erase endurance

≤ 1,000 times)

−

400

µs

−

Byte program time

(program/erase endurance

> 1,000 times)

−

−µs

−

Block erase time

(program/erase endurance

≤ 1,000 times)

−

0.2

−

Block erase time

(program/erase endurance

> 1,000 times)

−

0.3

−

td(SR-SUS)

Time delay from suspend request until

suspend

−−

97 + CPU clock

× 6 cycles

µs

−

Interval from erase start/restart until

following suspend request

650

−−

µs

−

Interval from program start/restart until

following suspend request

−−

−

Time from suspend until program/erase

restart

−−

3 + CPU clock

× 4 cycles

µs

−

Program, erase voltage

2.7

−

5.5

−

Read voltage

2.2

−

5.5

−

Program, erase temperature

-20(8)

−

°C

−

Data hold time(9)

Ambient temperature = 55

°C20

−−

year

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