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BTM7741G Datasheet(PDF) 12 Page - Infineon Technologies AG

Part # BTM7741G
Description  TrilithIC
PDF  18 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTM7741G Datasheet(HTML) 12 Page - Infineon Technologies AG

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BTM7741G
Data Sheet
12
Rev. 1.0, 2007-05-21
5.4
Electrical Characteristics
I
SH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40
°C < Tj < 150 °C; 8 V < VS< 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Current Consumption HS-switch
5.4.28
Quiescent current
I
S
–5
9
µA
IH1 = IH2 = 0 V
T
j = 25
°C
––
13
µA
IH1 = IH2 = 0 V
5.4.29
Supply current;
one HS-switch active
I
S
–
1.6
3.2
mA
IH1 or IH2 = 5 V
V
S = 12 V
5.4.30
Supply current;
both HS-switches active
I
S
–
3.2
6.4
mA
IH1 and IH2 = 5 V
V
S = 12 V
5.4.31
Leakage current of
high-side switch
I
SH LK
––
6
µA
V
IH = VSH = 0 V
V
S = 12 V
5.4.32
Leakage current through logic GND
in free wheeling condition
I
LKCL = IFH +
I
SH
––
10
mA
I
FH = 3 A
V
S = 12 V
Current Consumption LS-switch
5.4.33
Input current
I
IL
–8
30
µA
V
IL = 5 V;
normal operation
–
160
300
µA
V
IL = 5 V;
failure mode
5.4.34
Leakage current of low-side switch
I
DL LK
–2
10
µA
V
IL = 0 V
V
DSL = 18 V
Under Voltage Lockout HS-switch
5.4.35
Switch-ON voltage
V
UVON
––
4.8
V
V
S increasing
5.4.36
Switch-OFF voltage
V
UVOFF
1.8–
3.5V
V
S decreasing
5.4.37
Switch ON/OFF hysteresis
V
UVHY
–1
–V
V
UVON – VUVOFF
Output stages
5.4.38
Inverse diode of high-side switch;
Forward-voltage
V
FH
–0.8
1.2
V
I
FH = 3 A
5.4.39
Inverse diode of low-side switch;
Forward-voltage
V
FL
–0.8
1.2
V
I
FL = 3 A
5.4.40
Static drain-source on-resistance of
high-side switch
R
DS ON H
–
110
–
m
Ω ISH =1A; VS = 12 V
T
j = 25 °C
–
200
270
m
Ω ISH =1A; VS = 12 V
T
j = 150 °C
5.4.41
Static drain-source
on-resistance of low-side switch
R
DS ON L
–
100
–
m
Ω ISL =1 A; VIL = 5 V
T
j = 25 °C
–
160
230
m
Ω ISL =1 A; VIL = 5 V
T
j = 150 °C



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