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BTM7741G Datasheet(PDF) 12 Page - Infineon Technologies AG |
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BTM7741G Datasheet(HTML) 12 Page - Infineon Technologies AG |
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12 / 18 page ![]() BTM7741G Data Sheet 12 Rev. 1.0, 2007-05-21 5.4 Electrical Characteristics I SH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS< 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. Current Consumption HS-switch 5.4.28 Quiescent current I S –5 9 µA IH1 = IH2 = 0 V T j = 25 °C –– 13 µA IH1 = IH2 = 0 V 5.4.29 Supply current; one HS-switch active I S – 1.6 3.2 mA IH1 or IH2 = 5 V V S = 12 V 5.4.30 Supply current; both HS-switches active I S – 3.2 6.4 mA IH1 and IH2 = 5 V V S = 12 V 5.4.31 Leakage current of high-side switch I SH LK –– 6 µA V IH = VSH = 0 V V S = 12 V 5.4.32 Leakage current through logic GND in free wheeling condition I LKCL = IFH + I SH –– 10 mA I FH = 3 A V S = 12 V Current Consumption LS-switch 5.4.33 Input current I IL –8 30 µA V IL = 5 V; normal operation – 160 300 µA V IL = 5 V; failure mode 5.4.34 Leakage current of low-side switch I DL LK –2 10 µA V IL = 0 V V DSL = 18 V Under Voltage Lockout HS-switch 5.4.35 Switch-ON voltage V UVON –– 4.8 V V S increasing 5.4.36 Switch-OFF voltage V UVOFF 1.8– 3.5V V S decreasing 5.4.37 Switch ON/OFF hysteresis V UVHY –1 –V V UVON – VUVOFF Output stages 5.4.38 Inverse diode of high-side switch; Forward-voltage V FH –0.8 1.2 V I FH = 3 A 5.4.39 Inverse diode of low-side switch; Forward-voltage V FL –0.8 1.2 V I FL = 3 A 5.4.40 Static drain-source on-resistance of high-side switch R DS ON H – 110 – m Ω ISH =1A; VS = 12 V T j = 25 °C – 200 270 m Ω ISH =1A; VS = 12 V T j = 150 °C 5.4.41 Static drain-source on-resistance of low-side switch R DS ON L – 100 – m Ω ISL =1 A; VIL = 5 V T j = 25 °C – 160 230 m Ω ISL =1 A; VIL = 5 V T j = 150 °C |
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