EC3H04C

No.6580-1/6

High-Frequency Low-Noise Amplifier

and OSC Applications

Features

•

Low noise : NF=1.7dB typ (f=2GHz).

•

Hige cut-off frequency : fT=8GHz typ (VCE=1V).

•

Low operating voltage.

•

Ultraminiature (1008 size) and thin (0.6mm) leadless

package.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

9V

Collector-to-Emitter Voltage

VCEO

6V

Emitter-to-Base Voltage

VEBO

2V

Collector Current

IC

100

mA

Collector Dissipation

PC

100

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=5V, IE=0

1.0

µA

Emitter Cutoff Current

IEBO

VEB=1V, IC=0

10

µA

DC Current Gain

hFE

VCE=1V, IC=10mA

100

180

Gain-Bandwidth Product

fT

VCE=1V, IC=10mA

6

8

GHz

Output Capacitance

Cob

VCB=1V, f=1MHz

1.1

1.5

pF

Reverse Transfer Capacitance

Cre

VCB=1V, f=1MHz

0.85

pF

Forward Transfer Gain

4

5

dB

12

dB

Noise Figure

NF

VCE=1V, IC=10mA, f=2GHz

1.7

2.5

dB

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6580

EC3H04C

Package Dimensions

unit : mm

2184

[EC3H04C]

72100 TS IM TA-2738

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Epitaxial Planar Silicon Transistor

2

1

3

4

0.5

0.2

0.2

0.05

0.8

0.05

(Bottom View)

1 : Base

2 : Emitter

3 : Collector

4 : Collector

SANYO : E-CSP1008-4