3

3 - 1

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC968

v00.1210

General Description

Features

Functional Diagram

The hmC968 is a 4 stage GaAs phemT mmiC 1

watt power Amplifier which operates between 40 and

43.5 Ghz. The hmC968 provides 21 dB of gain, +32

dBm of saturated output power, and 15% pAe from

a +6V supply. with a very good ip3 performance of

+38 dBm, the hmC968 is ideal for linear applications

including point-to-point and point-to-multi-point ra-

dios. All data is taken with the chip in a 50 ohm test

fixture connected via (2) 0.025 mm (1 mil) diameter

wire bonds of 0.31 mm (12 mil) length.

saturated output power: +32 dBm @ 15% pAe

high output ip3: +38 dBm

high Gain: 21 dB

DC supply: +6V @ 900 mA

no external matching required

Die size: 2.76 x 2.33 x 0.1 mm

Electrical Specifications

T

[1]

Typical Applications

The hmC968 is ideal for:

• point-to-point radios

• point-to-multi-point radios

• VsAT & sATCom

• military & space

parameter

min.

Typ.

max.

Units

frequency range

37 - 40

Ghz

Gain

19

22

dB

Gain Variation over Temperature

0.03

dB/ °C

input return loss

17

dB

output return loss

14

dB

output power for 1 dB Compression (p1dB)

30.5

dBm

saturated output power (psat)

32

dBm

38

dBm

Total supply Current (idd)

900

mA

[1] Adjust Vgg between -2 to 0V to achieve idd = 900 mA typical.

[2] measurement taken at +6V @ 900 mA, pout / Tone = +20 dBm

GaAs pHEMT MMIC 1 WATT

POWER AMPLIFIER, 37 - 40 GHz