A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

6/7

ERROR! REFERENCE SOURCE NOT FOUND.

Specifications are subject to change without notice.

BLF278

505.000

0.98904

177.900

0.09288

24.3178

0.02253

95.5649

0.98953 -178.261

520.000

0.98753

177.826

0.08876

24.1062

0.02288

95.4464

0.98714 -178.215

535.000

0.98584

177.697

0.08378

27.3328

0.02415

97.1222

0.99400 -178.628

550.000

0.99250

177.572

0.08247

29.3983

0.02494

96.0530

0.99166 -178.778

565.000

0.99413

177.257

0.07822

27.2453

0.02571

97.8381

0.99387 -178.902

580.000

0.99245

177.031

0.07467

27.8200

0.02530

97.2712

0.98799 -179.373

595.000

0.98715

176.735

0.07101

32.0492

0.02706

96.9025

0.98797 -179.626

610.000

0.98797

176.550

0.06786

31.2308

0.02796

96.6285

0.98858 -179.785

625.000

0.98881

176.455

0.06254

32.4249

0.02841

97.4609

0.99071 -179.900

640.000

0.98908

176.285

0.06360

36.9496

0.02939

97.4627

0.98654 -179.575

655.000

0.98753

176.016

0.06277

37.0072

0.02935

98.2586

0.98868 -179.929

670.000

0.98643

175.910

0.06004

40.0063

0.03090

98.6724

0.99076

179.932

685.000

0.98840

175.782

0.06111

37.8170

0.03147

99.1738

0.98962

179.695

700.000

0.98846

175.800

0.05886

44.3227

0.03158

100.273

0.99068

179.587

710.000

0.98530

175.570

0.05697

43.3396

0.03291

100.088

0.99163

179.411

! Unit: BLF278

! S1E 1+1Die in an AR pkg.

!

! Meas: 110L#24

! Vds=50Vdc, Idq=400ma, Vgsth=4.10Vdc, wafer=00712-17

!

SPICE MODEL

*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET

*TO GENERATE S PARAMETER MATCHING DATA SHHET, SET VG = 4.3 V FOR IDQ = 455 Ma

*MODEL APPLICABLE FOR BLF278

*NOTE:- HP/EESOF USES ‘GATE DRAIN SOURCE’ ORDER

*

( ;D

G

S)

.SUBCKT BLF278/PF

20

10

30

LG

10

11

0.29n

RGATE

11

12

0.73

CG

10

30

0.01P

CRSS

12

17

15.3P

CISS

12

14

490P

LS

14

30

0.2N

CS

14

30

0.02P

LD

17

20

0.1N

CD

20

30

2.9P

R_RC

16

17

2.2

C_RC

14

16

31.2P

MOS

13

12

14

14 BLF278 MOS L = 1.1 U W = 0.778 ;D G S B LEVEL1

JFET

17

14

13

BLF278 JF

;D G S

DBODY

14

17

BLF278 DB

;P N

MODEL BLF278 MOS

NMOS

(VTO =4 KP = 0.9 E-5 LAMBDA = 0.15 RD = 0.065 RS = 0.07)

MODEL BLF278 JF

NJF

(VTO = 6.8 BETA = 1 LAMBDA =1)

MODEL BLF278 DB

D

(CJO = 1100 P RS = 0.25 VJ = 0.6 M = 0.4 BV = 13)

ENDS

S