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PD85025C Datasheet(PDF) 4 Page - STMicroelectronics |
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PD85025C Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Electrical characteristics PD85025C 4/10 2 Electrical characteristics TCASE = +25 oC 2.1 Static 2.2 Dynamic 2.3 ESD protection characteristics Table 4. Static Symbol Test conditions Min Typ Max Unit IDSS VGS = 0 V VDS = 25 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 10 V ID = TBD mA TBD V VDS(ON) VGS = 10 V ID = 1 A 270 310 mV CISS VGS = 0 V VDS = 12.5 V f = 1 MHz 49 pF COSS VGS = 0 V VDS = 12.5 V f = 1 MHz 35 pF CRSS VGS = 0 V VDS = 12.5 V f = 1 MHz 1.0 pF Table 5. Dynamic Symbol Test conditions Min. Typ. Max. Unit P3dB VDD = 13.6 V, IDQ = 300 mA f = 945 MHz 25 30 W GP VDD = 13.6 V , IDQ = 300 mA, POUT = 10 W, f = 945 MHz 15 17.5 dB hD VDD = 13.6 V, IDQ = 300 mA, POUT = P3dB, f = 945 MHz 60 73 % Load mismatch VDD = 17 V, IDQ = 300 mA, POUT = 45 W, f = 945 MHz All phase angles 20:1 VSWR Table 6. ESD protection characteristics Test conditions Class Human body model 2 Machine model M3 |
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