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MIC4103 Datasheet(PDF) 13 Page - Micrel Semiconductor

Part # MIC4103
Description  100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current
PDF  18 Pages
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Manufacturer  MICREL [Micrel Semiconductor]
Direct Link  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MIC4103 Datasheet(HTML) 13 Page - Micrel Semiconductor

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Micrel
MIC4103/4104
November 2010
13
M9999-110910-B
Application Information
The average reverse current and power dissipation due to
reverse recovery can be estimated by:
Time
Recovery
Reverse
t
Current
Recovery
Reverse
Peak
I
:
where
5
.
0
rr
RRM
)
(
)
(
=
=
×
=
×
×
×
=
REV
AVE
RR
RR
S
rr
RRM
AVE
RR
V
I
Pdiode
f
t
I
I
The total diode power dissipation is:
RR
fwd
total
Pdiode
Pdiode
Pdiode
+
=
An optional external bootstrap diode may be used instead
of the internal diode (Figure 6). An external diode may be
useful if high gate charge MOSFETs are being driven and
the power dissipation of the internal diode is contributing to
excessive die temperatures. The voltage drop of the
external diode must be less than the internal diode for this
option to work. The reverse voltage across the diode will
be equal to the input voltage minus the VDD supply voltage.
A 100V Schottky diode will work for most 72V input
telecom applications. The above equations can be used to
calculate power dissipation in the external diode, however,
if the external diode has significant reverse leakage
current, the power dissipated in that diode due to reverse
leakage can be calculated as:
supply
power
the
of
frequency
switching
fs
/
t
Cycle
Duty
D
Voltage
Reverse
Diode
V
T
and
V
at
flow
current
Reverse
I
:
where
)
1
(
ON
REV
J
REV
R
=
=
=
=
=
−
×
×
=
S
REV
R
REV
f
D
V
I
Pdiode
The on-time is the time the high-side switch is conducting.
In most power supply topologies, the diode is reverse
biased during the switching cycle off-time.
HS
HB
HO
Vdd
C
B
LO
Level
shift
HI
LI
Vss
Vin
Figure 6. Optional Bootstrap Diode
Gate Driver Power Dissipation
Power dissipation in the output driver stage is mainly
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 7 shows a simplified equivalent circuit of the
MIC4103 driving an external MOSFET.
HS
HB
HO
External
FET
Vdd
C
B
Rg
Rg_fet
Ron
Roff
Cgd
Cgs
Figure 7. MIC4103 Driving an External MOSFET



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