Analog Integrated Circuit Device Data

6

Freescale Semiconductor

33981

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

POWER OUTPUT (VPWR) (continued)

Current Sense Leakage(9)

INHS = 1 with OUT opened of load or INHS = 0

0

13

17

μA

Over-temperature Shutdown

160

175

190

°C

Over-temperature Shutdown Hysteresis(10)

5.0

–

20

LOW SIDE GATE DRIVER (VPWR, VGLS, VOCLS)

Low Side Gate Voltage

5.0

8.0

12.0

12.0

5.4

8.4

12.4

12.4

6.0

9.0

13.0

13.0

V

Low Side Gate Sinked Current

–

100

–

mA

Low Side Gate Sourced Current

–

100

–

mA

Low Side Overload Detection Level versus Low Side Drain Voltage

-50

–

+50

mV

CONTROL INTERFACE (CONF, INHS, INLS, EN, OCLS)

Input Logic High-voltage (CONF, INHS, INLS)

3.3

–

–

V

Input Logic Low-voltage (CONF, INHS, INLS)

–

–

1.0

V

Input Logic Voltage Hysteresis (CONF, INHS, INLS)

100

600

1200

mV

Input Logic Active Pull-down Current (INHS, INLS)

5.0

10

20

μA

Enable Pull-down Resistor (EN)

100

200

400

k

Ω

Enable Voltage Threshold (EN)

2.5

V

Input Clamp Voltage (EN)

7.0

–

14

V

Input Forward Voltage (EN)

-2.0

–

-0.3

V

Input Active Pull-up Current (OCLS)

50

100

200

μA

Input Active Pull-up Current (CONF)

5.0

10

20

μA

FS Tri-state Capacitance(10)

–

–

20

pF

FS Low-state Output Voltage

–

0.2

0.4

V

Temperature Feedback

3.35

3.45

3.55

V

Temperature Feedback Derating(10)

-8.5

-8.9

-9.3

mV/°C

Notes

9.

This parameter is achieved by the design characterization by measuring a statistically relevant sample size across process variations

but not tested in production.

10.

Parameter is guaranteed by process monitoring but is not production tested.

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 6.0 V

Characteristic

Symbol

Min

Typ

Max

Unit