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SST25VF032B Datasheet(PDF) 22 Page - Microchip Technology

Part # SST25VF032B
Description  32 Mbit SPI Serial Flash
PDF  31 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST25VF032B Datasheet(HTML) 22 Page - Microchip Technology

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©2011 Silicon Storage Technology, Inc.
S71327-04-000
02/11
22
32 Mbit SPI Serial Flash
SST25VF032B
Data Sheet
A Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................. -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential .................. -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C)................................... 1.0W
Surface Mount Solder Reflow Temperature ........................... 260°C for 10 seconds
Output Short Circuit Current1................................................... 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Table 8: Operating Range
Range
Ambient Temp
VDD
Industrial
-40°C to +85°C
2.7-3.6V
T8.1 1327
Table 9: AC Conditions of Test1
1. See Figure 26
Input Rise/Fall Time
Output Load
5ns
CL =30pF
T9.1 1327
Table 10:DC Operating Characteristics (VDD = 2.7-3.6V)
Symbol
Parameter
Limits
Test Conditions
Min
Max
Units
IDDR
Read Current
10
mA
CE# = 0.1 VDD/0.9 VDD@25 MHz, SO = open
IDDR2
Read Current
20
mA
CE# = 0.1 VDD/0.9 VDD@66 MHz, SO = open
IDDR3
Read Current
25
mA
CE# = 0.1 VDD/0.9 VDD@80 MHz, SO = open
IDDW
Program and Erase Current
30
mA
CE# = VDD
ISB
Standby Current
20
µA
CE# = VDD,VIN =VDD or VSS
ILI
Input Leakage Current
1
µA
VIN = GND to VDD,VDD =VDD Max
ILO
Output Leakage Current
1
µA
VOUT = GND to VDD,VDD =VDD Max
VIL
Input Low Voltage
0.8
V
VDD =VDD Min
VIH
Input High Voltage
0.7 VDD
VVDD =VDD Max
VOL
Output Low Voltage
0.2
V
IOL = 100 µA, VDD =VDD Min
VOL2
Output Low Voltage
0.4
V
IOL = 1.6 mA, VDD =VDD Min
VOH
Output High Voltage
VDD-0.2
V
IOH = -100 µA, VDD =VDD Min
T10.0 1327



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