Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.

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January 2010 - Rev 18-Jan-10

Page 5 of 7

App Note [1] Biasing - As shown in the bonding diagram, this

device is operated with a single drain and gate voltage and it also

includes a separate gain control voltage. Maximum gain bias is

nominally Vd=8.5V,Vg1=0.0V,Vg2=1.0V, and Id=120mA. Gain can be

adjusted by changing Vg1. It is recommended to use active biasing

to keep the currents constant as the RF power and temperature

vary; this gives the most reproducible results. Depending on the

supply voltage available and the power dissipation constraints, the

bias circuit may be a single transistor or a low power operational

amplifier, with a low value resistor in series with the drain supply

used to sense the current.The gate of the pHEMT is controlled to

maintain correct drain current and thus drain voltage.The typical gate voltage needed to do this is 0.0V.Typically the

gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to

ensure negative gate bias is available before applying the positive drain supply.

App Note [2] Bias Arrangement - Each DC pad (Vd and Vg1,2) need to have DC bypass capacitance (~100-200 pF) as

close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

0.05-50.0 GHz GaAs MMIC

Distributed Amplifier

D1002-BD