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IXGF32N170 Datasheet(PDF) 4 Page - IXYS Corporation |
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IXGF32N170 Datasheet(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXGF32N170 Fig. 7. Transconductance 0 5 10 15 20 25 30 35 40 45 0 10 2030 4050 60708090 100 I C - Amperes TJ = - 40ºC 125ºC 25ºC Fig. 8. Gate Charge 0 2 4 6 8 10 12 14 16 0 20406080 100 120 140 160 Q G - nanoCoulombs VCE = 850V IC= 32A IG= 10mA Fig. 9. Capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 VC E - Volts Cies Coes Cres f = 1 MHz Fig. 10. Dependence of Eoff on RG 9 11 13 15 17 19 21 23 25 0 5 10 15 20 25 30 35 40 45 50 R G - Ohms TJ = 125ºC VGE = 1 5V VCE = 1 0 2 0V IC = 64A IC = 16A IC = 32A Fig. 11. Dependence of Eoff on IC 8 10 12 14 16 18 20 22 16 20 24 28 32 36 40 44 48 52 56 60 64 I C - Amperes RG = 2.7Ω RG= 1 5Ω - - - - VGE = 15V VGE = 10 2 0V TJ = 125ºC TJ = 25ºC Fig. 12. Dependence of Eoff on Temperature 6 8 10 12 14 16 18 20 22 24 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade IC = 64A RG = 2.7Ω RG= 1 5Ω - - - - VGE = 15V VGE = 10 2 0V IC = 16A IC = 32A |
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