MAX5965BUAX datasheet(2/54 Pages) MAXIM

2 / 54 page

High-Power, Quad, Monolithic, PSE Controllers

for Power over Ethernet

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ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(VAGND = 32V to 60V, VEE = 0V, VDD to VDGND = +3.3V, all voltages are referenced to VEE, unless otherwise noted. Typical values are at

VAGND = +48V, VDGND = +48V, VDD = (VDGND + 3.3V), TA = +25°C. Currents are positive when entering the pin and negative other-

wise.) (Note 2)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

(Voltages referenced to VEE, unless otherwise noted.)

AGND, DGND, DET_, VDD, RESET, A3–A0, SHD_, OSC,

SCL, SDAIN, AUTO .............................................-0.3V to +80V

OUT_........................................................-12V to (AGND + 0.3V)

GATE_ (internally clamped) (Note 1) ..................-0.3V to +11.4V

SENSE_ ..................................................................-0.3V to +24V

VDD, RESET, MIDSPAN, A3–A0, SHD_, OSC, SCL,

SDAIN and AUTO to DGND ..................................-0.3V to +7V

INT and SDAOUT to DGND....................................-0.3V to +12V

Maximum Current into INT, SDAOUT, DET_ .......................80mA

Maximum Power Dissipation (TA = +70°C)

36-Pin SSOP (derate 17.4mW/°C above +70°C) .....1388.9mW

Operating Temperature Ranges:

MAX5965A/MAX5965B_EAX ...…………………-40°C to +85°C

MAX5965A/MAX5965B_UAX ...............................0°C to +85°C

Storage Temperature Range .............................-65°C to +150°C

Junction Temperature ......................................................+150°C

Lead Temperature (soldering, 10s) .................................+300°C

Soldering Temperature (reflow) .......................................+260°C

Note 1: GATE_ is internally clamped to 11.4V above VEE. Driving GATE_ higher than 11.4V above VEE may damage the device.

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

POWER SUPPLIES

VAGND

VAGND - VEE

VDGND

060

VDD to VDGND, VDGND = VAGND

2.4

3.6

Operating Voltage Range

VDD

VDD to VDGND, VDGND = VEE

3.0

3.6

IEE

VOUT_ = VEE, VSENSE_ = VEE, DET_ = AGND,

all logic inputs open, SCL = SDAIN = VDD.

INT and SDAOUT unconnected. Measured at

AGND in power mode after GATE_ pullup

4.8

6.8

Supply Currents

IDIG

All logic inputs high, measured at VDD

0.2

0.4

GATE DRIVER AND CLAMPING

GATE_ Pullup Current

IPU

Power mode, gate drive on, VGATE_ = VEE

(Note 3)

-40

-50

-65

µA

Weak GATE_ Pulldown Current

IPDW

SHD_ = DGND, VGATE_ = VEE + 10V

µA

Maximum Pulldown Current

IPDS

VSENSE_ = 600mV, VGATE_ = VEE + 2V

100

External Gate Drive

VGS

VGATE_ - VEE, power mode, gate drive on,

IPU = 1µA

11.5

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