SC1405

HIGH SPEED SYNCHRONOUS POWER

MOSFET SMART DRIVER

© 2000 SEMTECH CORP.

652 MITCHELL ROAD NEWBURY PARK CA 91320

August 31, 2000

4

ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Cont.

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

AC OPERATING SPECIFICATIONS

HIGH-SIDE DRIVER

rise time

tr

CI = 3nF, V

16

25

ns

fall time

tf

TG

CI = 3nF, V

17

27

ns

propagation delay time,

TG going high

tpdh

TG

CI = 3nF, V

C-delay=0

35

56

ns

propagation delay time,

TG going low

tpdl

TG

CI = 3nF, V

25

40

ns

LOW-SIDE DRIVER

rise time

tr

BG

CI = 3nF, V

20

32

ns

fall time

tr

BG

CI = 3nF, V

18

29

ns

propagation delay time

BG going high

tpdh

BGHI

CI = 3nF, V

DRN < 1V

45

72

ns

progagation delay time

BG going low

tpdl

BG

CI = 3nF, V

12

20

ns

UNDER-VOLTAGE LOCKOUT

V_5 ramping up

tpdh

UVLO

EN is High

10

us

V_5 ramping down

tpdl

UVLO

EN is High

10

us

PRDY

EN is transitioning from low to

high

tpdhPRDY

V_5 > UVLO threshold, Delay

measured from EN > 2.0V to

PRDY > 3.5V

10

µs

EN is transitioning from high to

low

tpdh

UVLO

V_5 > UVLO threshold. Delay

measured from EN < 0.8V tp

PRDY < 10% of V_5

500

µs

DSPS_DR

rise/fall time

tr

DSPS_DR,

tf

DSPS_DR

CI = 100pf, V_5 = 4.6V,

20

ns

propagation delay,

DSPS_DR going high

tpdh

DSPS_DR

S_MOD goes high and

BG goes high or S_MOD goes low

10

ns

propagation delay

DSPS_DR goes low

tpdl

DSPS_DR

S_MOD goes high and BG goes

low

10

ns

OVERVOLTAGE PROTECTION

propagation delay

OVP_S going high

tpdh

OVP_S

V_5 = 4.6V, T

1.2V to BG > 90% of V_5

1µs

Note:

(1) This device is ESD sensitive. Use of standard ESD handling precautions is required.