© Semiconductor Components Industries, LLC, 2010

February, 2010 − Rev. 4

1

Publication Order Number:

2N4401/D

2N4401

General Purpose

Transistors

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

40

Vdc

Collector − Base Voltage

60

Vdc

Emitter − Base Voltage

6.0

Vdc

Collector Current − Continuous

600

mAdc

Total Device Dissipation

Derate above 25°C

625

5.0

mW

mW/°C

Total Device Dissipation

Derate above 25°C

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

−55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

200

°C/W

Thermal Resistance, Junction−to−Case

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

COLLECTOR

3

2

BASE

1

EMITTER

MARKING DIAGRAM

2N

4401

AYWW G

G

2N4401 = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1