LH28F016LL datasheet(1/29 Pages) SHARP

Part #	LH28F016LL

Description	16M (1M 횞 16, 2M 횞 8) Flash Memory

PDF	29 Pages

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Manufacturer	SHARP [Sharp Corporation]

Direct Link	http://sharp-world.com/

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LH28F016LL

1

16M (1M × 16, 2M × 8) Flash Memory

Figure 1. TSOP Configuration

FEATURES

• User-Configurable x8 or x16 Operation

• 3 V Write/Erase Operation (3 V V

PP)

– 2.7 - 3.6 V Write-Erase Operation

• 120 ns Maximum Access Time

(V

CC = 3.0 V)

• 150 ns Maximum Access Time

(V

CC = 2.7 V)

• 32 Independently Lockable Blocks (64K)

• 0.48 MB/sec Write Transfer Rate

• 100,000 Erase Cycles per Block

• Revolutionary Architecture

– Pipelined Command Execution

– Write During Erase

– Command Superset of

Sharp LH28F016SU

• 10 µA (MAX.) I

CC in CMOS Standby

• 5 µA (MAX.) Deep Power-Down

• State-of-the Art 0.6 µm ETOX™

Flash Technology

• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP

(Type I) Package

28F016LLT-1

TOP VIEW

56-PIN TSOP

2

3

4

5

8

9

A16

A19

A20

53

52

51

50

49

48

45

42

LX

6

7

A17

A18

47

46

RY/BY

DQ15

DQ14

GND

10

11

12

55

54

OE

VCC

13

44

DQ4

43

VCC

A15

DQ7

14

15

16

17

18

19

20

39

36

41

40

38

37

DQ3

DQ10

DQ2

VCC

A10

A9

A11

CX

RP

CE0

A8

DQ9

WE

DQ6

DQ13

DQ11

56

1

CE1

VSSL

WP

21

22

23

24

25

26

27

28

A4

A3

A5

A7

A6

GND

A2

A1

34

DQ8

35

DQ1

31

33

32

30

29

A0

BYTE

NC

DQ0

A14

A13

A12

DQ5

DQ12

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LH28F016LL Datasheet(PDF) 1 Page - Sharp Corporation

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