SH8M13 datasheet(2/11 Pages) ROHM

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Data Sheet

SH8M13



Electrical characteristics (Ta = 25

C)

<Tr1(Nch)>

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

IGSS

±10

AVGS=±20V, VDS=0V

Drain-source breakdown voltage V (BR)DSS

ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

AVDS=30V, VGS=0V

Gate threshold voltage

VGS (th)

1.0

2.5

VDS=10V, ID=1mA

-22

ID=6.0A, VGS=10V

-30

ID=6.0A, VGS=4.5V

-35

ID=6.0A, VGS=4.0V

Forward transfer admittance

l Yfs l

2.5

VDS=10V, ID=6.0A

Input capacitance

Ciss

350

VDS=10V

Output capacitance

Coss

160

VGS=0V

Reverse transfer capacitance

Crss

f=1MHz

Turn-on delay time

td(on)

-8

ID=3.0A, VDD 15V

Rise time

VGS=10V

Turn-off delay time

td(off)

RL=5

Fall time

-7

RG=10

Total gate charge

5.0

nC ID=6.0A

Gate-source charge

Qgs

1.4

nC VDD 15V

Gate-drain charge

Qgd

1.9

nC VGS=5V

*Pulsed



Body diode characteristics (Source-Drain) (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

VSD

1.2

Is=6.0A, VGS=0V

*Pulsed

Parameter

Conditions

Parameter

Static drain-source on-state

resistance

RDS (on)



2/10

2011.05 - Rev.A

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