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SH8M13 Datasheet(PDF) 1 Page - Rohm |
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SH8M13 Datasheet(HTML) 1 Page - Rohm |
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1 / 11 page ![]() Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch + Pch MOSFET SH8M13 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Inner circuit Package Taping Code TB Basic ordering unit (pieces) 2500 SH8M13 Absolute maximum ratings (Ta = 25 C) Tr1 : N-ch Tr2 : P-ch Drain-source voltage VDSS 30 30 V Gate-source voltage VGSS ±20 ±20 V Continuous ID 6.0 7.0 A Pulsed IDP 24 28 A Continuous Is 1.6 1.6 A Pulsed Isp 24 28 A W / TOTAL W / ELEMENT Channel temperature Tch C Range of storage temperature Tstg C *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board. 2.0 55 to 150 Unit Limits 1.4 150 Total power dissipation PD Symbol Type Source current (Body Diode) Drain current Parameter (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE SOP8 (1) (8) (5) (4) *1 *1 ∗2 ∗1 ∗2 ∗1 (8) (7) (1) (2) (6) (5) (3) (4) *2 1/10 2011.05 - Rev.A |
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