LPC1311 datasheet(49/73 Pages) NXP

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LPC1311_13_42_43

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Product data sheet

Rev. 4 — 20 June 2011

49 of 73

NXP Semiconductors

LPC1311/13/42/43

32-bit ARM Cortex-M3 microcontroller

10. Dynamic characteristics

10.1 Power-up ramp conditions

[1]

See Figure 25.

[2]

The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.

10.2 Flash memory

[1]

Number of program/erase cycles.

[2]

Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.

Table 12.

Power-up characteristics

Tamb = 40 C to +85 C.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

rise time

at t = t1: 0 < VI 400 mV

[1] 0-

500

twait

wait time

[1][2] 12

s

input voltage

at t = t1 on pin VDD

400

Condition: 0 < VI 400 mV at start of power-up (t = t1)

Fig 25. Power-up ramp

VDD

400 mV

twait

t = t1

002aag001

Table 13.

Flash characteristics

Tamb = 40 C to +85 C, unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Nendu

endurance

[1] 10000

100000

cycles

tret

retention time

powered

years

unpowered

years

ter

erase time

sector or multiple

consecutive sectors

100

105

tprog

programming time

[2] 0.95

1.05

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