For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

7

7 - 7

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+6 V

rf input power (rfiN)

(Vdd = +5 Vdc)

+10 dBm

Channel Temperature

150 °C

Continuous pdiss (T= 85 °C)

(derate 8.93 mw/°C above 85 °C)

0.58 w

Thermal resistance

(channel to ground paddle)

112 °C/w

storage Temperature

-65 to +150 °C

operating Temperature

-40 to +85 °C

eleCTrosTATiC seNsiTiVe DeViCe

oBserVe HANDliNG preCAUTioNs

Vdd (V)

idd (mA)

2.7

20

3.0

30

3.3

40

4.5

80

5.0

90

5.5

100

Note: Amplifier will operate over full voltage range shown above.

Typical Supply

Current vs. Vdd (Rbias = 3.92kΩ)

Vdd (V)

rbias (Ω)

idd (mA)

min

max

recommended

3V

open Circuit

2.7k

27

3.92k

31

4.7k

33

10k

39

5V

0

open Circuit

820

73

2k

84

3.92k

91

10k

95

[1] with Vdd = 3V, rbias < 1k ohm is not recommended and may result in the lNA becoming conditionally stable.

Absolute Bias Resistor

Range & Recommended Bias Resistor Values for Idd

HMC616LP3 / 616LP3E

v02.0610

GaAs SMT PHEMT LOW NOISE

AMPLIFIER, 175 - 660 MHz